The Resource Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication, D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication, D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards

Label
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
Title
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
Statement of responsibility
D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards
Creator
Contributor
Subject
Language
eng
Member of
http://library.link/vocab/creatorName
Meyers, D. R
Government publication
federal national government publication
Index
no index present
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Center for Electronics and Electrical Engineering (U.S.)
  • United States
  • United States
Series statement
  • Semiconductor measurement technology
  • NBS special publication
Series volume
400-60
http://library.link/vocab/subjectName
  • Semiconductor doping
  • Neutron irradiation
  • Silicon
Label
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication, D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards
Instantiates
Publication
Note
  • Sponsored by Division of Electric Energy Systems, Department of Energy
  • Issued May 1980
  • CODEN : XNBSAV
Bibliography note
Includes bibliographical references
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
17008810
Dimensions
27 cm.
Extent
iii, 29 pages
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Label
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication, D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards
Publication
Note
  • Sponsored by Division of Electric Energy Systems, Department of Energy
  • Issued May 1980
  • CODEN : XNBSAV
Bibliography note
Includes bibliographical references
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
17008810
Dimensions
27 cm.
Extent
iii, 29 pages
Media category
unmediated
Media MARC source
rdamedia
Media type code
n

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