The Resource Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007, H.A. Atwater, California Institute of Technology

Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007, H.A. Atwater, California Institute of Technology

Label
Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007
Title
Si passivation and chemical vapor deposition of silicon nitride
Title remainder
final technical report, March 18, 2007
Statement of responsibility
H.A. Atwater, California Institute of Technology
Creator
Contributor
Subject
Language
eng
Summary
This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen
Member of
Cataloging source
SOE
http://library.link/vocab/creatorName
Atwater, H. A
Government publication
federal national government publication
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • technical reports
http://library.link/vocab/relatedWorkOrContributorName
  • California Institute of Technology
  • National Renewable Energy Laboratory (U.S.)
Series statement
NREL/SR
Series volume
520-42325
http://library.link/vocab/subjectName
  • Polycrystalline semiconductors
  • Silicon
  • Thin films
  • Photovoltaic cells
Label
Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007, H.A. Atwater, California Institute of Technology
Link
Instantiates
Publication
Note
  • Title from title screen (viewed Mar. 20, 2008)
  • "November 2007."
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
mixed
Computer file characteristics
Electronic data (1 PDF file : 989 Kb)
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
17582148
Dimensions
unknown
Extent
iv, 33 pages
Form of item
electronic
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
digital, PDF file.
Specific material designation
remote
System details
  • Mode of access: Internet from the National Renewable Energy Laboratory web site. Address as of 3/20/08: http://www.nrel.gov/docs/fy08osti/42325.pdf ; current access available via PURL
  • Full text available via Internet in .pdf format. Adobe Acrobat Reader required
Label
Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007, H.A. Atwater, California Institute of Technology
Link
Publication
Note
  • Title from title screen (viewed Mar. 20, 2008)
  • "November 2007."
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
mixed
Computer file characteristics
Electronic data (1 PDF file : 989 Kb)
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
17582148
Dimensions
unknown
Extent
iv, 33 pages
Form of item
electronic
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
digital, PDF file.
Specific material designation
remote
System details
  • Mode of access: Internet from the National Renewable Energy Laboratory web site. Address as of 3/20/08: http://www.nrel.gov/docs/fy08osti/42325.pdf ; current access available via PURL
  • Full text available via Internet in .pdf format. Adobe Acrobat Reader required

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