Coverart for item
The Resource Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon, Martin G. Buehler ; Electronic Technology Division

Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon, Martin G. Buehler ; Electronic Technology Division

Label
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon
Title
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon
Statement of responsibility
Martin G. Buehler ; Electronic Technology Division
Creator
Contributor
Subject
Language
eng
Member of
Cataloging source
GPO
http://library.link/vocab/creatorName
Buehler, Martin G
Government publication
federal national government publication
Index
no index present
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • Institute for Applied Technology (U.S.)
  • United States
  • United States
  • United States
Series statement
  • Semiconductor measurement technology
  • NBS special publication
Series volume
400-22
http://library.link/vocab/subjectName
  • Integrated circuits
  • Electronic apparatus and appliances
Label
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon, Martin G. Buehler ; Electronic Technology Division
Instantiates
Publication
Note
  • CODEN: XNBSAV
  • "Jointly supported by the National Bureau of Standards, the Defense Nuclear Agency, the Defense Advanced Research Projects Agency, and the Navy Strategic Systems Project Office."
Bibliography note
Bibliography: pages 48-49
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
16939908
Dimensions
26 cm.
Extent
vi, 49 pages, 1 unnumbered page
Lccn
76600032
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations
Label
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon, Martin G. Buehler ; Electronic Technology Division
Publication
Note
  • CODEN: XNBSAV
  • "Jointly supported by the National Bureau of Standards, the Defense Nuclear Agency, the Defense Advanced Research Projects Agency, and the Navy Strategic Systems Project Office."
Bibliography note
Bibliography: pages 48-49
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
16939908
Dimensions
26 cm.
Extent
vi, 49 pages, 1 unnumbered page
Lccn
76600032
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations

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