The Resource Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee

Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee

Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Title
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Statement of responsibility
Fred Semendy, Phillip Boyd, and Unchul Lee
Creator
Contributor
Subject
Language
eng
Member of
Cataloging source
DTICE
http://library.link/vocab/creatorName
Semendy, Fred
Government publication
federal national government publication
Illustrations
  • illustrations
  • charts
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
  • technical reports
http://library.link/vocab/relatedWorkOrContributorName
  • Boyd, Phillip
  • Lee, Unchul
  • U.S. Army Research Laboratory
Series statement
ARL-TR
Series volume
3370
http://library.link/vocab/subjectName
  • Plasma etching
  • Gallium nitride
Target audience
general
Type of report
Final report.
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Link
http://purl.access.gpo.gov/GPO/LPS125009
Instantiates
Publication
Note
  • Title from PDF title screen (viewed on Aug. 10, 2010)
  • "November 2004."
Bibliography note
Includes bibliographical references (pages 11-12)
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
mixed
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
18210097
Dimensions
unknown
Extent
1 online resource (iv, 15 pages)
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations (chiefly color), color charts.
Specific material designation
remote
System control number
(OCoLC)ocm74275409
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Link
http://purl.access.gpo.gov/GPO/LPS125009
Publication
Note
  • Title from PDF title screen (viewed on Aug. 10, 2010)
  • "November 2004."
Bibliography note
Includes bibliographical references (pages 11-12)
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
mixed
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
18210097
Dimensions
unknown
Extent
1 online resource (iv, 15 pages)
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations (chiefly color), color charts.
Specific material designation
remote
System control number
(OCoLC)ocm74275409

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